SPN2342 description applications the SPN2342 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration(sot-23-3l) part marking ? 20v/5.0a,r ds(on) = 35m ? @v gs =4.5v ? 20v/4.5a,r ds(on) = 40m ? @v gs =2.5v ? 20v/4.0a,r ds(on) = 48m ? @v gs =1.8v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-3l package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN2342s23rg sot-23-3l 42yw SPN2342s23rgb sot-23-3l 42yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN2342s23rg : tape reel ; pb ? free SPN2342s23rgb : tape reel ; pb ? free ; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 20 v gate ?source voltage v gss 12 v t a =25 4.0 continuous drain current(t j =150 ) t a =70 i d 3.0 a pulsed drain current i dm 13 a continuous source current(diode conduction) i s 1.0 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 140 /w SPN2342 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.4 1.0 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 10 ua on-state drain current i d(on) v ds 5 v, v gs =4.5v 6 a v gs = 4.5v,i d =5.0a 0.026 0.035 v gs = 2.5v,i d =4.5a 0.029 0.040 ? drain-source on-resistance r ds(on) v gs = 1.8v,i d =4.0a 0.035 0.048 forward transconductance gfs v ds =15v,i d =5.0a 30 s diode forward voltage v sd i s =1.0a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 10 13 gate-source charge q gs 1.4 gate-drain charge q gd v ds =10v,v gs =4.5v i d 5.0a 2.1 nc input capacitance c iss 600 output capacitance c oss 120 reverse transfer capacitance c rss v ds =10v,v gs =0v f=1mhz 100 pf t d(on) 15 25 turn-on time t r 40 60 t d(off) 45 65 turn-off time t f v dd =10v,r l =10 ? i d 1.0a,v gen =4.5v r g =6 ? 30 40 ns SPN2342 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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